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IGZO Sputtering Targets

Product Details

IGZO Sputtering Targets
General
Indium Gallium Zinc Oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O), High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. IGZO's advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxidesemiconductors.
Material Notes
Indium Gallium Zinc Oxide Sputtering Targets, Purity is 99.99%;Circular: Diameter = 1mm; Block: Length

Contact Information

Contact PersonEcho Chou
Telephone86-0731-89578196
Fax Number
Websitehttp://www.aemdeposition.com/
Post Code
AddressRm. 408, Building 1, No. 31, Yinshan Road, Yuelu District, Changsha, Hunan, China
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